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SMPS MOSFET
PD - 94986
IRFBC40APBF
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001)
VDSS
600V
Rds(on) max
1.2
ID
6.2A
TO-220AB
G DS
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
6.2 3.9 25 125 1.0 30 6.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topologies:
l
Single Transistor Forward
Notes
through are on page 8
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1
2/5/04
IRFBC40APBF
V(BR)DSS
Static @ TJ = 25C (unless otherwise specified)
Parameter Min. Drain-to-Source Breakdown Voltage 600 V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reverse Leakage --- Typ. --- 0.66 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 1.2 VGS = 10V, ID = 3.7A 4.0 V VDS = VGS, ID = 250A 25 VDS = 600V, VGS = 0V A 250 VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.4 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 13 23 31 18 1036 136 7.0 1487 36 48 Max. Units Conditions --- S VDS = 50V, ID = 3.7A 42 ID = 6.2A 10 nC VDS = 480V 20 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 6.2A ns --- RG = 9.1 --- RD = 47,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
570 6.2 13
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50
Max.
1.0 --- 62
Units
C/W
Diode Characteristics
IS
I SM
VSD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 6.2 showing the A G integral reverse --- --- 25 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 6.2A, VGS = 0V --- 431 647 ns TJ = 25C, IF = 6.2A --- 1.8 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFBC40APBF
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
4.5V
0.1
4.5V
1
0.01 0.1
20s PULSE WIDTH TJ = 25 C J
1 10 100
0.1
20s PULSE WIDTH TJ = 150 C J
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
6.2A ID = 5.9A
I D , Drain-to-Source Current (A)
2.5
TJ = 150 C
10
2.0
TJ = 25 C
1
1.5
1.0
0.5
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFBC40APBF
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
20
ID = 6.2A 5.9A VDS = 480V VDS = 300V VDS = 120V
VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance(pF)
16
1000
Ciss Coss
12
100
8
10
Crss
4
1 1 10 100 1000
0
FOR TEST CIRCUIT SEE FIGURE 13
0 8 16 24 32 40
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
10
TJ = 150 C
I D , Drain Current (A)
10 100us
TJ = 25 C
1
1ms 1 10ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFBC40APBF
7.0 6.0
V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
ID , Drain Current (A)
5.0 4.0 3.0 2.0 1.0 0.0
-V DD
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFBC40APBF
EAS , Single Pulse Avalanche Energy (mJ)
15V
1400 1200 1000 800 600 400 200 0
TOP BOTTOM
VDS
L
DRIVER
ID 2.8A 3.9A 6.2A
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
25
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
820
10 V
QGS
QGD
V DSav , Avalanche Voltage ( V )
800
VG
Charge
780
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
760
50K 12V .2F .3F
740
D.U.T. VGS
3mA
+ V - DS
720 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
IAV , Avalanche Current ( A)
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFBC40APBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFBC40APBF
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
Notes:
Repetitive rating; pulse width limited by Starting TJ = 25C, L =29.6mH
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25, IAS = 6.2A. (See Figure 12) TJ 150C
ISD 6.2A, di/dt 80A/s, VDD V(BR)DSS,
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04
8
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